Preliminary radiation tests of 32mm thick hydrogenated amorphous silicon films
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چکیده
Preliminary radiation tests of hydrogenated amorphous silicon n–i–p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill.
منابع مشابه
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تاریخ انتشار 2005